Electronic device

ABSTRACT

An electronic device includes a substrate, a light emitting diode and an optical sensor. The light emitting diode is disposed on the substrate and emits a light. The optical sensor is disposed on the substrate and is configured to receive the light. The optical sensor receives the light to generate a first electrical signal for fingerprint authentication, and receives the light to generate a second electrical signal for luminance calibration of the light.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. application Ser. No. 16/904,476,filed on Jun. 17, 2020. The content of the application is incorporatedherein by reference.

BACKGROUND OF THE DISCLOSURE 1. Field of the Disclosure

The present disclosure relates to an electronic device, moreparticularly to an electronic device including optical sensor.

2. Description of the Prior Art

In electronic devices, the optical sensor may be configured to detectlight and generate signal in order to perform the functions of theelectronic device. However, as users have higher demand about theelectronic device, to improve the design of the optical sensor hasbecome an important issue in electronic industry.

SUMMARY OF THE DISCLOSURE

In some embodiments, an electronic device is provided by the presentdisclosure. The electronic device includes a substrate, a light emittingdiode and an optical sensor. The light emitting diode is disposed on thesubstrate and emits a light. The optical sensor is disposed on thesubstrate and is configured to receive the light, wherein the opticalsensor receives the light to generate a first electrical signal forfingerprint authentication and receives the light to generate a secondelectrical signal for luminance calibration of the light.

These and other objectives of the present disclosure will no doubtbecome obvious to those of ordinary skill in the art after reading thefollowing detailed description of the embodiment that is illustrated inthe various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates a cross-sectional view of an electronicdevice according to the first embodiment of the present disclosure.

FIG. 2 schematically illustrates a partial enlargement cross-sectionalview of an optical sensor according to a variant embodiment of the firstembodiment of the present disclosure.

FIG. 3 schematically illustrates a cross-sectional view of an electronicdevice according to the second embodiment of the present disclosure.

FIG. 4 schematically illustrates a cross-sectional view of an electronicdevice according to the third embodiment of the present disclosure.

FIG. 5 schematically illustrates a top view of a light emitting diodeand an optical sensor according to a variant embodiment of the thirdembodiment of the present disclosure.

FIG. 6 schematically illustrates a functional block diagram of anexemplary operation method of the optical sensor according to the firstembodiment of the present disclosure.

FIG. 7 schematically illustrates a functional block diagram of anotherexemplary operation method of the optical sensor according to the firstembodiment of the present disclosure.

FIG. 8 schematically illustrates a flow chart of an operation method ofthe electronic device according to the third embodiment of the presentdisclosure.

FIG. 9 schematically illustrates an electronic device according to anembodiment of the present disclosure.

DETAILED DESCRIPTION

The present disclosure may be understood by reference to the followingdetailed description, taken in conjunction with the drawings asdescribed below. It is noted that, for purposes of illustrative clarityand being easily understood by the readers, various drawings of thisdisclosure show a portion of the electronic device, and certain elementsin various drawings may not be drawn to scale. In addition, the numberand dimension of each element shown in drawings are only illustrativeand are not intended to limit the scope of the present disclosure.

Certain terms are used throughout the description and following claimsto refer to particular elements. As one skilled in the art willunderstand, electronic equipment manufacturers may refer to an elementby different names. This document does not intend to distinguish betweenelements that differ in name but not function.

In the following description and in the claims, the terms “include”,“comprise” and “have” are used in an open-ended fashion, and thus shouldbe interpreted to mean “include, but not limited to . . . ”.

It will be understood that when an element or layer is referred to asbeing “disposed on” or “connected to” another element or layer, it canbe directly on or directly connected to the other element or layer, orintervening elements or layers may be presented (indirectly). Incontrast, when an element is referred to as being “directly on” or“directly connected to” another element or layer, there are nointervening elements or layers presented.

Although terms such as first, second, third, etc., maybe used todescribe diverse constituent elements, such constituent elements are notlimited by the terms. The terms are used only to discriminate aconstituent element from other constituent elements in thespecification. The claims may not use the same terms, but instead mayuse the terms first, second, third, etc. with respect to the order inwhich an element is claimed. Accordingly, in the following description,a first constituent element maybe a second constituent element in aclaim.

It should be noted that the technical features in different embodimentsdescribed in the following can be replaced, recombined, or mixed withone another to constitute another embodiment without departing from thespirit of the present disclosure.

Referring to FIG. 1 , FIG. 1 schematically illustrates a cross-sectionalview of an electronic device according to the first embodiment of thepresent disclosure. The electronic device 100 may include a displaydevice, antenna, sensing device or tiled device, but not limitedthereto. The electronic device may be a foldable electronic device or aflexible electronic device. The electronic device 100 may for example beserved as a common display, a tiled display, a vehicle display, adisplay panel, a touch panel, a light source module, a television, asmart phone, a tablet, a laptop, a lighting equipment or an electronicdevice applied to the above-mentioned products, but not limited to theabove-mentioned examples. As shown in FIG. 1 , the electronic device 100may include a substrate 102, a circuit layer 104, an optical sensor 106and a light emitting diode 108. The substrate 102 may be a rigidsubstrate (such as glass substrate, quartz substrate, ceramic substrateor sapphire substrate, but not limited thereto), a flexible substrate(such as polyimide substrate, polycarbonate substrate, polyethyleneterephthalate substrate or the like), other suitable substrate or thecombinations of the above-mentioned substrates, but not limited thereto.

The light emitting diode 108 is disposed on the substrate 102, and mayfor example include a first electrode 108 a, a second electrode 108 cand a light emitting layer 108 b, wherein the light emitting layer 108 bis located between the first electrode 108 a and the second electrode108 c. The first electrode 108 a and the second electrode 108 c mayrespectively be served as the cathode and anode of the light emittingdiode 108, but not limited thereto. In a variant embodiment, the firstelectrode 108 a and the second electrode 108 c may respectively beserved as the anode and cathode of the light emitting diode 108. In thepresent embodiment, the second electrode 108 c may be closer to thesubstrate 102 than the first electrode 108 a. The second electrode 108 cis located at the lower side of the light emitting layer 108 b, whichmay be called as a lower electrode, and the first electrode 108 a islocated at the upper side of the light emitting layer 108 b, which maybe called as an upper electrode. The first electrode 108 a and thesecond electrode 108 c may include metal oxide or metal material such asindium tin oxide, but not limited thereto. The light emitting diode 108may for example include organic light emitting diode (OLED), quantum dotlight-emitting diode (QLED or QDLED), mini light emitting diode (miniLED), micro light emitting diode (micro LED), other suitable lightemitting elements or the combinations thereof. In an embodiment, theelectronic device 100 may include liquid crystal (LC), quantum dot (QD),fluorescent material, phosphor material, other suitable material, or thecombinations thereof, but not limited thereto. For example, the lightemitting diode 108 shown in FIG. 1 may be the organic light emittingdiode, but the present disclosure is not limited thereto. Besides, thelight emitting diode 108 of the present disclosure may for exampleinclude blue light emitting diode, red light emitting diode, green lightemitting diode or white light emitting diode, but not limited thereto.For example, the light emitting diode 108 maybe a blue light emittingdiode. Although only one light emitting diode 108 is shown in FIG. 1 ,the present disclosure is not limited thereto. For example, theelectronic device 100 may include two or more light emitting diodes.

A pixel defining layer 114 may be included on the substrate 102, whereinthe pixel defining layer 114 may include at least one opening 114 a. Thelight emitting diode 108 may be mainly located in the opening 114 a, orin other words, the light emitting layer 108 b of the light emittingdiode 108 may be located in the opening 114 a. In an embodiment, theopening 114 a of the pixel defining layer 114 may define the lightemitting region of light emitting area of the light emitting diode 108.According to the present disclosure, the light emitting diode 108 mayemit a light L1 and a light L2. The light L1 may be emitted away fromthe substrate 102. In another aspect, the light L2 may be emitted towardthe substrate 102.

The circuit layer 104 is disposed on the substrate 102, and may includevarious kinds of conductive lines, circuits and/or electronic elementssuch as switch element 110 and driving element 112. The switch element110 and the driving element 112 may for example include a thin filmtransistor, but the present disclosure is not limited thereto. Theswitch element 110 may include a gate electrode 110G, a source electrode1105, a drain electrode 110D, a semiconductor layer 110C and a firstgate insulating layer GI. The first gate insulating layer GI is locatedbetween the gate electrode 110G and the semiconductor layer 110C. Thegate electrode 110G of the switch element 110 maybe electricallyconnected to the scan line (not shown in FIG. 1 ), and the sourceelectrode 1105 may be electrically connected to the data line DL. Thedriving element 112 may include a gate electrode 112G, a sourceelectrode 112S, a drain electrode 112D, a semiconductor layer 112C andthe first gate insulating layer GI. The first gate insulating layer GIis located between the gate electrode 112G and the semiconductor layer112C. In an embodiment, the gate electrode 112G of the driving element112 may be electrically connected to the drain electrode 110D of theswitch element 110, the drain electrode 112D of the driving element 112may be electrically connected to the second electrode 108 c of the lightemitting diode 108, and the source electrode 112S of the driving element112 may be electrically connected to the working voltage source (VDD) orthe common voltage source, but not limited thereto. Besides, althoughthe switch element 110 and the driving element 112 shown in FIG. 1 is atop gate thin film transistor, the present disclosure is not limitedthereto. The switch element 110 and the driving element 112 may alsoinclude bottom gate thin film transistor or multi-gate thin filmtransistor (such as dual gate/double gate thin film transistor), and theswitch element 110 and the driving element 112 may include the same typeor different types of the thin film transistor. In an embodiment, thematerials of the semiconductor layer 110C of the switch element 110 andthe semiconductor layer 112C of the driving element 112 may respectivelyinclude amorphous semiconductor, poly-crystalline semiconductor, metaloxide (such as indium gallium zinc oxide (IGZO)), or the combinationsthereof, but not limited thereto. The materials of the semiconductorlayer 110C and the semiconductor layer 112C may be the same ordifferent. For example, the material of one of the semiconductor layer110C and the semiconductor layer 112C may include poly-crystallinesilicon, and the material of another one of the semiconductor layer 110Cand the semiconductor layer 112C may include indium gallium zinc oxide.

In the present embodiment, the optical sensor 106 may be located betweenthe light emitting diode 108 and the substrate 102, but not limitedthereto. Although the optical sensor 106 shown in FIG. 1 is locatedbetween the substrate 102 and the light emitting diode 108, the opticalsensor 106 maybe disposed in other positions. For example, the opticalsensor 106 may be disposed below the substrate 102 (that is, thesubstrate 102 is located between the optical sensor 106 and the lightemitting diode 108) or above the light emitting diode 108 (that is, thelight emitting diode 108 is located between the optical sensor 106 andthe substrate 102). The optical sensor 106 may be various types of theoptical sensor, and in the present embodiment, the PIN type diode istaken as an example of the optical sensor 106, but not limited thereto.As shown in FIG. 1 , the optical sensor 106 may include a firstelectrode AE, a first semiconductor layer C1, a second semiconductorlayer C2, a third semiconductor layer C3 and a second electrode BE. Thefirst electrode AE and the second electrode BE may for example includemetal materials, metal oxides or other suitable conductive materials,but not limited thereto. The first semiconductor layer C1 may includeone of the N-type semiconductor layer and the P-type semiconductorlayer, the third semiconductor layer C3 may include another one of theN-type semiconductor layer and the P-type semiconductor layer, and thesecond semiconductor layer C2 may include intrinsic semiconductor layer.For example, the first semiconductor layer C1 may be a N-typesemiconductor layer, the second semiconductor layer C2 may be anintrinsic semiconductor layer, and the third semiconductor layer C3 maybe a P-type semiconductor layer, but the present disclosure is notlimited thereto.

A sensor switch element DT may be electrically connected to the opticalsensor 106. The sensor switch element DT may be disposed adjacent to theoptical sensor 106, for example, the switch element DT may be disposedbelow the optical sensor 106 and may for example be configured tocontrol the transmission of the sensing signal. In the presentembodiment, the sensor switch element DT may for example be a thin filmtransistor, and may include a gate electrode GE2, a source electrodeSE2, a drain electrode DE2, a semiconductor layer SC2 and a second gateinsulating layer GI2. The second gate insulating layer GI2 is locatedbetween the gate electrode GE2 and the semiconductor layer SC2, but notlimited thereto. In the present embodiment, the source electrode SE2 ofthe sensor switch element DT may for example be electrically connectedto the second electrode BE of the optical sensor 106, but not limitedthereto.

According to the present embodiment, the optical sensor 106 may bepartially overlapped with the light emitting diode 108 in a thicknessdirection D1 of the substrate 102. The term “partially overlapped” meansthat the entire light emitting diode 108 or a portion of the lightemitting diode 108 may be overlapped with the optical sensor 106 in thethickness direction D1. As shown in FIG. 1 , the optical sensor 106includes a first region R1 and a second region R2, the first region R1is not overlapped with the light emitting diode 108, and the secondregion R2 is overlapped with the light emitting diode 108. It should benoted that the term “overlapped with the light emitting diode 108” meansthat the optical sensor 106 and the second electrode 108 c of the lightemitting diode 108 are at least partially overlapped, but the presentdisclosure is not limited thereto. In the present embodiment, the areaof the first region R1 of the optical sensor 106 may be greater than thearea of the second region R2 of the optical sensor 106. In someembodiments, a ratio of the area of the second region R2 to the area ofthe light emitting diode 108 may range from 0.1 to 1 (that is,0.1≤ratio≤1). It should be noted that the term “area of the lightemitting diode” may be regarded as the area of the light emitting layer108 b in a top view, but the present disclosure is not limited thereto.For example, the area of the light emitting diode 108 may also bedefined by the area of the lower surface of the opening 114 a of thepixel defining layer 114.

The first region R1 of the optical sensor 106 may for example receivethe light L1 emitted from the light emitting diode 108, for example,when the object FG (such as fingers) touches the electronic device 100,the light L1 may be reflected by the object FG such that the firstregion R1 may receive the light L1, thereby generating a firstelectrical signal. The first electrical signal may for example be forfingerprint authentication, but not limited thereto. The optical sensor106 may for example be configured to receive ambient light to generatethe first electrical signal in order to obtain the information of theambient light. The second region R2 of the optical sensor 106 may forexample be configured to receive the light L2 emitted from the lightemitting diode 108 to generate a second electrical signal. The secondelectrical signal may for example be for luminance calibration of thelight emitting diode 108, but not limited thereto. In an embodiment, thefirst electrical signal and the second electrical signal mayrespectively be for fingerprint authentication, obtaining theinformation of ambient light, luminance calibration of the lightemitting diode 108 and/or other suitable functions, but not limitedthereto.

In an embodiment, a light shielding layer LS may be disposed on thesubstrate 102, and is located between the circuit layer 104 and thesubstrate 102 in the thickness direction D1, for example, the lightshielding layer LS may be located between the switch element 110 and thesubstrate 102 and/or between the driving element 112 and the substrate102, but not limited thereto. The light shielding layer LS may forexample be configured to decrease the incoming light from the substrate102 in order to decrease the effect of the ambient light on the switchelement 110 and the driving element 112, but not limited thereto.

In an embodiment, a planarization layer PLN may be disposed on theoptical sensor 106, and may provide a flat surface PLNS in order todispose the second electrode 108 c and the light emitting layer 108 bwhich are subsequently formed, but not limited thereto. A functionallayer FL and a protection layer CG may be selectively included in theelectronic device 100 of the present disclosure. The functional layer FLmay be served to provide the optical function or the touch functionrequired by the electronic device 100, and the protection layer CG mayfor example be configured to protect the functional layer FL and otherlayers and/or elements below the functional layer FL, but not limitedthereto. The electronic device 100 may further include an insulatinglayer 120 disposed on the pixel defining layer 114 and the lightemitting diode 108. In some embodiments, the insulating layer 120 maybea single layer structure or a multi-layer structure. For example, theinsulating layer 120 may include a first insulating layer 120 a, asecond insulating layer 120 b and a third insulating layer 120 c, thefirst insulating layer 120 a and the third insulating layer 120 c mayfor example include inorganic insulating materials, and the secondinsulating layer 120 b may for example include organic insulatingmaterials, but not limited thereto. In an embodiment, the insulatinglayer 120 may also provide planarization effect. Except for theabove-mentioned elements or layers, the electronic device 100 of thepresent embodiment may for example include a buffer layer BF disposed onthe light shielding layer LS, an intermediate dielectric layer ILDdisposed on the first gate insulating layer GI, an insulating layer BP1disposed on the intermediate dielectric layer ILD and an insulatinglayer BP2 disposed on the second gate insulating layer GI2, but notlimited thereto.

Referring to FIG. 2 , FIG. 2 schematically illustrates a partialenlargement cross-sectional view of an optical sensor according to avariant embodiment of the first embodiment of the present disclosure. Inthe present variant embodiment, the materials of the first region R1 andthe second region R2 of the optical sensor 106 may have differentcombinations according to the demands. The optical sensor 106 mayinclude a first electrode A1, a first type semiconductor layer N1, anintrinsic semiconductor layer I1, a second type semiconductor layer P1and a second electrode B1 which are located in the first region R1, anda first electrode A2, a first type semiconductor layer N2, an intrinsicsemiconductor layer 12, a second type semiconductor layer P2 and asecond electrode B2 which are located in the second region R2. In anembodiment, the first type semiconductor layer N1 and the first typesemiconductor layer N2 may be one of the N-type semiconductor layer andthe P-type semiconductor layer, and the second type semiconductor layerP1 and the second type semiconductor layer P2 maybe another one of theN-type semiconductor layer and the P-type semiconductor layer. Accordingto a variant embodiment, the first electrode A1 and the first electrodeA2 may include the same material such as conductive material, and thesecond electrode B1 and the second electrode B2 may include the samematerial such as conductive material. That is, the semiconductor layersin the first region R1 and the second region R2 (including the firsttype semiconductor layer, the intrinsic semiconductor layer and thesecond type semiconductor layer) may share the first electrode and thesecond electrode. Besides, in an embodiment, the materials of the firsttype semiconductor layer N1, the intrinsic semiconductor layer I1 andthe second type semiconductor layer P1 in the first region R1 mayrespectively be the same as the materials of the first typesemiconductor layer N2, the intrinsic semiconductor layer 12 and thesecond type semiconductor layer P2 in the second region R2, but thedoping amount of the semiconductor layers in these two regions may bedifferent. For example, the semiconductor layers in the first region R1and the second region R2 (including the first type semiconductor layer,the intrinsic semiconductor layer and the second type semiconductorlayer) may include silicon, and the doping amount of the first typesemiconductor layer N2, the second type semiconductor layer P2 and/orthe intrinsic semiconductor layer 12 in the second region R2 may begreater than the doping amount of the first type semiconductor layer N1,the second type semiconductor layer P1 and/or the intrinsicsemiconductor layer I1 in the first region R1, but the presentdisclosure is not limited thereto. According to another variantembodiment, the materials of the first type semiconductor layer N1, theintrinsic layer I1 and the second type semiconductor layer P1 in thefirst region R1 may respectively be different from the materials of thefirst type semiconductor layer N2, the intrinsic layer 12 and the secondtype semiconductor layer P2 in the second region R2. For example, thematerials of the first type semiconductor layer N1, the intrinsic layerI1 and the second type semiconductor layer P1 in the first region R1 mayfor example include silicon, and the materials of the first typesemiconductor layer N2, the intrinsic layer 12 and the second typesemiconductor layer P2 in the second region R2 may for example includegermanium, but not limited thereto. In another embodiment, the materialof the second type semiconductor layer P1 in the first region R1 may bethe same as the material of the second type semiconductor layer P2 inthe second region R2, for example, including silicon. Besides, thematerials of the first type semiconductor layer N1 and the intrinsiclayer I1 in the first region R1 may respectively be different from thematerials of the first type semiconductor layer N2 and the intrinsiclayer 12 in the second region R2. For example, the second typesemiconductor layer P1 in the first region R1 and the second typesemiconductor layer P2 in the second region R2 may for example includesilicon, the first type semiconductor layer N1 and the intrinsicsemiconductor layer I1 in the first region R1 may for example includesilicon, and the first type semiconductor layer N2 and the intrinsicsemiconductor layer 12 in the second region R2 may for example includegermanium, but not limited to the above-mentioned materials. Accordingto yet another embodiment, in the optical sensor 106, the material ofthe first electrode A1 in the first region R1 may be different from thematerial of the first electrode A2 in the second region R2, and thematerial of the second electrode B1 in the first region R1 may bedifferent from the material of the second electrode B2 in the secondregion R2. Besides, the materials of the first type semiconductor layerN1, the intrinsic layer I1 and the second type semiconductor layer P1 inthe first region R1 may be different from the materials of the firsttype semiconductor layer N2, the intrinsic layer 12 and the second typesemiconductor layer P2 in the second region R2. For example, the firsttype semiconductor layer N1, the intrinsic layer I1 and the second typesemiconductor layer P1 in the first region R1 may include silicon, andthe first type semiconductor layer N2, the intrinsic layer 12 and thesecond type semiconductor layer P2 in the second region R2 may includegermanium, but not limited thereto. The materials of each of the layerssuch as the first electrode, the second electrode, the first typesemiconductor layer, the intrinsic semiconductor layer and the secondtype semiconductor layer in the first region R1 and the second region R2mentioned above maybe designed to be the same or different according tothe demands.

Referring to FIG. 3 , FIG. 3 schematically illustrates a cross-sectionalview of an electronic device according to the second embodiment of thepresent disclosure. In order to simplify the figure, the functionallayer and the protection layer which are selectively disposed areomitted in FIG. 3 . The main difference between the electronic device200 of the present embodiment and the electronic device of the firstembodiment shown in FIG. 1 is that the second electrode 208 c of thelight emitting diode 208 of the electronic device 200 in the presentembodiment may include an opening 208 d. As shown in FIG. 3 , the lightemitting diode 208 may include a first electrode 208 a, a light emittinglayer 208 b and a second electrode 208 c, wherein an opening 208 d maybe included in the second electrode 208 c, and the light emitting layer208 b maybe filled into the opening 208 d. The first electrode 208 a andthe second electrode 208 c of the light emitting diode 208 may forexample include metal oxide or metal material. For example, the firstelectrode 208 a may include metal oxide material (such as indium tinoxide (ITO)), and the second electrode 208 c may include conductivemetal material, but not limited thereto. Similarly, although only onelight emitting diode 208 is shown in FIG. 3 , the present disclosure isnot limited thereto. The electronic device 200 may for example includetwo or more light emitting diodes. Similar to the first embodiment, theoptical sensor 206 of the present embodiment has a first region R1 notoverlapping the light emitting diode 208 and a second region R2overlapping the light emitting diode 208. The first region R1 of theoptical sensor 206 may for example receive the light L1 to generate thefirst electrical signal for fingerprint authentication. The light L1 maybe emitted from the light emitting diode 208, and may be reflected bythe object FG to the optical sensor 206; the second region R2 of theoptical sensor 206 may for example receive the light L2 emitted from thelight emitting diode 208, and may for example generate the secondelectrical signal for luminance calibration of the light emitting diode208, but the present disclosure is not limited to the above-mentionedcontents. According to the present embodiment, the light L2 may forexample be emitted from the light emitting layer 208 b and reach thesecond region R2 of the optical sensor 206 through the opening 208 d,but not limited thereto. Other elements or layers of the electronicdevice 200 of the present embodiment may be the same as or similar tothe elements or layers in the first embodiment, and will not beredundantly described here.

Referring to FIG. 4 , FIG. 4 schematically illustrates a cross-sectionalview of an electronic device according to the third embodiment of thepresent disclosure. The electronic device 400 may include a substrate402, a circuit layer 404, an optical sensor 406, a first light emittingdiode 408 and a second light emitting diode 410. The main differencebetween the present embodiment and the second embodiment is that theelectronic device 400 of the present embodiment has the first lightemitting diode 408 and the second light emitting diode 410, and theoptical sensor 406 may be partially overlapped with the second lightemitting diode 410. The second light emitting diode 410 may include afirst electrode 410 a, a light emitting layer 410 b and a secondelectrode 410 c. The material of the substrate 402, the structure of thecircuit layer 404, the material and disposed position of the opticalsensor 406, and the materials of the first light emitting diode 408 andthe second light emitting diode 410 may refer to the first embodiment,which will not be redundantly described here. It should be noted thatalthough only two light emitting diodes are shown in FIG. 4 , thepresent disclosure is not limited thereto. The electronic device 400 mayinclude more light emitting diodes. In the present embodiment, as shownin FIG. 4 , the first light emitting diode 408 may not be overlappedwith the optical sensor 406, and the second light emitting diode 410 maybe partially overlapped with the optical sensor 406, but not limitedthereto. Similarly, the term “partially overlapped” means that theentire second light emitting diode 410 or a portion of the second lightemitting diode 410 may be overlapped with the optical sensor 406 in thethickness direction D1. The optical sensor 406 may include a firstregion R1 and a second region R2, wherein the first region R1 is notoverlapped with the second light emitting diode 410, and the secondregion R2 is overlapped with the second light emitting diode 410. Itshould be noted that the second region R2 of the present embodiment mayinclude the region in which the optical sensor 206 and the secondelectrode 208 c of the light emitting diode 208 are at least partiallyoverlapped, and the region in which the optical sensor 206 and theopening 208 d are at least partially overlapped, but the presentdisclosure is not limited thereto. According to the present embodiment,the first light emitting diode 408 may emit the first light L1′, and thefirst region R1 of the optical sensor 406 may for example receive thefirst light L1′ emitted from the first light emitting diode 408, but notlimited thereto. For example, when the object FG touches the electronicdevice 400, the first light L1′ may be reflected by the object FG suchthat the first region may receive the first light L1′ and generate thefirst electrical signal. The first electrical signal may for example befor fingerprint authentication, but not limited thereto. The opticalsensor 406 may for example be configured to detect the ambient light togenerate the first electrical signal for obtaining the information (suchas luminance) of the ambient light. The second light emitting diode 410may emit the second light L2′, and the second region R2 of the opticalsensor 406 may for example receive the second light L2′ emitted from thesecond light emitting diode 410, but not limited thereto. For example,the second region R2 of the optical sensor 406 may receive the secondlight L2′ emitted from the second light emitting diode 410 and generatethe second electrical signal for luminance calibration of the secondlight emitting diode 410, but not limited thereto. According to thepresent embodiment, the wavelength of the first light L1′ may be greaterthan the wavelength of the second light L2′. The wavelength of the firstlight L1′ may range from 495 nanometers (nm) to 570 nm (495 nm≤L1′≤570nm), and the wavelength of the second light L2′ may range from 450 nm to495 nm (450 nm≤L2′≤495 nm). For example, the first light L1′ may includegreen light, and the second light L2′ may include blue light, but notlimited thereto. It should be noted that “the wavelength of the firstlight L1′ may be greater than the wavelength of the second light L2′”mentioned above means that the peak value of the crest of thespectrogram of the first light L1′ is greater than the peak value of thecrest of the spectrogram of the second light L2′. The spectrogram of thefirst light L1′ and the spectrogram of the second light L2′ may beobtained by measuring the first light L1′ emitted from the first lightemitting diode 408 and the second light L2′ emitted from the secondlight emitting diode 410 at outside (or display surface) of the device,but not limited thereto. Although the second light L2′ shown in FIG. 4is emitted toward the substrate 402, the emitting direction or measuringdirection of the second light L2′ is not limited thereto. According tothe present embodiment, when operating the electronic device 400, thefirst light L1′ and the second light L2′ may be emitted simultaneouslyor not, that is, when the first light emitting diode 408 emits the firstlight the second light emitting diode 410 may emit the second light L2′simultaneously, or, the time when the first light emitting diode 408emits the first light L1′ and the time when the second light emittingdiode 410 emits the second light L2′ may be staggered. Besides, in thepresent embodiment, as shown in FIG. 4 , the second electrode 410 c ofthe second light emitting diode 410 includes an opening 410 d,therefore, the second light L2′ may for example be emitted from thesecond light emitting diode 410, and reach the second region R2 of theoptical sensor 406 through the opening 410 d, but not limited thereto.In other variant embodiments, the second electrode 410 c of the secondlight emitting diode 410 may not include the opening 410 d, and thesecond light L2′ may directly penetrate through the second electrode 410c and reach the second region R2 of the optical sensor 406. For example,when the second electrode 410 c includes opaque material (such as metalmaterial), the opening 410 d may be formed in the second electrode 410 cin order to allow the light L2′ to penetrate through. When the secondelectrode 410 c includes transparent material (such as transparentconductive material), the opening 410 d may not be formed in the secondelectrode 410 c. In an embodiment, the first electrical signal and thesecond electrical signal may respectively be for fingerprintauthentication, obtaining the information of the ambient light,luminance calibration of the light emitting diode 108, and/or othersuitable functions, but not limited thereto. For example, the opticalsensor 406 may use the first light L1′ to generate the first electricalsignal for luminance calibration of the first light emitting diode 408and/or the second light emitting diode 410.

Referring to FIG. 5 , FIG. 5 schematically illustrates a top view of alight emitting diode and an optical sensor according to a variantembodiment of the third embodiment of the present disclosure. Theelectronic device 400 may include a first light emitting diode 408, asecond light emitting diode 410, a third light emitting diode 412 and anoptical sensor 406. In order to simplify the figure, FIG. 5 only showsthe light emitting layer 408 b and the second electrode 408 c of thefirst light emitting diode 408, the light emitting layer 410 b and thesecond electrode 410 c of the second light emitting diode 410, and thelight emitting layer 412 b and the second electrode 412 c of the thirdlight emitting diode 412. In an embodiment, the adjacent first lightemitting diode 408, the second light emitting diode 410 and the thirdlight emitting diode 412 may form a pixel, and the second light emittingdiode 410 may be partially overlapped with the optical sensor 406 in thethickness direction D1. In another embodiment, the optical sensor 406may be partially overlapped with the first light emitting diode 408 inthe thickness direction D1, and the first light emitting diode 408 isdisposed between the second light emitting diode 410 and the third lightemitting diode 412. The first light emitting diode 408 may emit a lightwith a first color, the second light emitting diode 410 may emit a lightwith a second color, and the third light emitting diode 412 may emit alight with a third color, wherein the first color, the second color andthe third color may be different from each other, or at least two of thefirst color, the second color and the third color are the same, but notlimited thereto. For example, the first color, the second color and thethird color may respectively be one of red color, green color and bluecolor, but the present disclosure is not limited thereto. For example,because the decay of the blue light emitting diode may be more obviousthan the red light emitting diode and the green light emitting diode,the second light emitting diode 410 which is overlapped with the opticalsensor may be deigned to be a blue light emitting diode in order to makethe optical sensor 406 capable of detecting the light emitted from theblue light emitting diode and performing luminance calibration, but notlimited thereto. Besides, according to the present embodiment, thesecond electrode 410 c of the second light emitting diode 410 mayinclude an opening 410 d and the light may for example reach the opticalsensor 406 through the opening 410 d, but not limited thereto. In othervariant embodiments, the second electrode 410 c may not include theopening 410 d. In other embodiments, a pixel may include four lightemitting diodes or more than four light emitting diodes such as the redlight emitting diode, the blue light emitting diode, the green lightemitting diode and the white light emitting diode, but not limitedthereto.

Referring to FIG. 6 to FIG. 7 and also referring to FIG. 1 , FIG. 6schematically illustrates a functional block diagram of an exemplaryoperation method of the optical sensor according to the first embodimentof the present disclosure, and FIG. 7 schematically illustrates afunctional block diagram of another exemplary operation method of theoptical sensor according to the first embodiment of the presentdisclosure. As shown in FIG. 6 , the electronic device 100 may furtherinclude a processor 130, wherein the processor 130 may include afingerprint authentication unit 132 and a luminance calibration unit134. The optical sensor 106 may receive the light signal in differenttiming sequence, and transfer the light signal into the first electricalsignal ES1 and the second electrical signal ES2. For example, theoptical sensor 106 may transfer the light L1 received in the firstregion R1 into the first electrical signal ES1 in a time period, andtransmit the first electrical signal ES1 to the fingerprintauthentication unit 132, and the information of the fingerprint may beobtained through calculation or identification performed by thefingerprint authentication unit 132. In another aspect, the opticalsensor 106 may transfer the light L2 received in the second region R2into the second electrical signal ES2 in another time period, andtransmit the second electrical signal ES2 to the luminance calibrationunit 134, and the light emitting effect of the light emitting diode 108may be judged by the luminance calibration unit 134. If the calibrationprocess is needed, a calibration signal may be sent by the luminancecalibration unit 134. That is, as mentioned above, the optical sensor106 may respectively process the light received in the first region R1and the second region R2 at different time periods. As mentioned above,the first electrical signal ES1 may for example be for fingerprintauthentication, and the second electrical signal ES2 may for example befor luminance calibration of the light emitting diode, but not limitedthereto. Besides, the optical sensor 106 may optionally include anambient light identification unit 136. When the optical sensor 106receives the ambient light, the received ambient light may betransferred into a third electrical signal ES3, the third electricalsignal ES3 may be transmitted to the ambient light identification unit136, and the information of the ambient light may be obtained throughcalculation or identification performed by the ambient lightidentification unit 136, but not limited thereto. According to thepresent embodiment, the ambient light may for example be received in thefirst region R1 of the optical sensor 106, but not limited thereto.Referring to FIG. 7 , in another exemplary operation method, theprocessor 130 of the electronic device 100 may further include anelectrical signal distributor 138. According to the present embodiment,the optical sensor 106 may only receive a light. In an embodiment, thelight may include the light L1 and the light L2 emitted simultaneously.The light may be transferred into an electrical signal ES, theelectrical signal ES may be divided into the first electrical signal ES1and the second electrical signal ES2 by the electrical signaldistributor 138 in the processor 130, and the first electrical signalES1 and the second electrical signal ES2 may be respectively sent to thefingerprint authentication unit 132 and the luminance calibration unit134 at the same time. The application of the first electrical signal ES1and the second electrical signal ES2 may refer to the above-mentionedcontents, and will not be redundantly described. In an variantembodiment, the processor 130 shown in FIG. 7 may also include theambient light identification unit, the electrical signal distributor 138may transfer the electrical signal ES into the second electrical signalES2 and the third electrical signal (not shown in FIG.), and the secondelectrical signal ES2 and the third electrical signal may berespectively transmitted to the luminance calibration unit 134 and theambient light identification unit.

Referring to FIG. 8 , and also referring to FIG. 4 , FIG. 8schematically illustrates a flaw chart of an operation method of theelectronic device according to the third embodiment of the presentdisclosure. The electronic device 400 may for example be a displaydevice, but not limited thereto. As shown in FIG. 8 , the display devicemay for example selectively enter the fingerprint authentication modeSFM or the luminance detection mode SCM. For example, when the userwants to enter the fingerprint authentication mode SFM, the step 5100may be performed to turn on the fingerprint authentication mode SFM.Then, the step 5102 may be performed on the display device to turn offthe second light emitting diode 410, wherein the second light emittingdiode 410 may be partially overlapped with the optical sensor 406, forexample, the sub-pixel corresponding to the second light emitting diode410 may be turned off. For example, when the display device enters thefingerprint authentication mode SFM, the blue sub-pixel may be turnedoff, but not limited thereto. Because the authentication of thefingerprint may be performed by the first electrical signal generatedafter the first region R1 of the optical sensor 406 receives the firstlight L1′, in order to decrease the effect of the second light L2′emitted from the second light emitting diode 410 on the result of thedetection, the sub-pixel corresponding to the second light emittingdiode 410 may be turned off. After the step 5102 is finished, the step5104 may be performed to receive the first light, thereby generating thefirst electrical signal. The optical sensor 406 may for example receivethe first light L1′ emitted from the first light emitting diode 408 andreflected by the object FG, and the first light L1′ may be transferredinto the first electrical signal in order to identify the information ofthe fingerprint, but not limited thereto. When the user wants to enterthe luminance detection mode SCM, the step 5106 may be performed to turnon the luminance detection mode SCM. Then, the step 5108 may beperformed on the display device to turn off the first light emittingdiode. For example, the first light emitting diode 408, which is notoverlapped with the optical sensor 406, may be turned off, or thesub-pixel corresponding to the first light emitting diode 408 may beturned off. For example, when the display device enters the luminancedetection mode, the red sub-pixel or the green sub-pixel may be turnedoff, but not limited thereto. Because the detection of the luminancemaybe performed by the second electrical signal generated after thesecond region R2 of the optical sensor 406 receives the second light L2′of the second light emitting diode 410, in order to decrease the effectof the first light L1′ emitted from the first light emitting diode 408on the result of the detection, the sub-pixel corresponding to the firstlight emitting diode 408 may be turned off. After the step 5108 isfinished, the step 5110 may be performed to receive the second light andgenerate the second electrical signal. The optical sensor 406 may forexample receive the second light L2′ emitted from the second lightemitting diode 410, and transfer the second light L2′ into the secondelectrical signal in order to confirm the information of the luminance,thereby adjusting the luminance of the second light emitting diode 410,but not limited thereto.

Referring to FIG. 9 , FIG. 9 schematically illustrates an electronicdevice according to an embodiment of the present disclosure. As shown inFIG. 9 , the electronic device of the present disclosure may be appliedto a display device 900, wherein the display device 900 may include adisplay region IR and a peripheral region PR, and the display device 900may further include a plurality of optical sensors distributed in thedisplay region IR (not shown in FIG. 9 ). The optical sensor here mayrefer to any one of the optical sensors shown in FIG. 1 to FIG. 5 , andthe display device 900 may include any one of the electronic devicesshown in FIG. 1 to FIG. 5 such as the electronic device 400 shown inFIG. 4 , wherein the electronic device 400 includes the first lightemitting diode 408 and the second light emitting diode 410. In thenormal display mode, as shown in part (I), the entire display region IRmay display a comprehensive image, but not limited thereto. In thefingerprint detection mode, as shown in part (II), the display region IRof the display device 900 may be divided into the fingerprint detectionregion Rf and the non-fingerprint detection region Rnf. For example, thefingerprint detection region Rf and the non-fingerprint detection regionRnf may respectively display different colors or patterns. In someembodiments, each of the sub-pixels in the non-fingerprint detectionregion Rnf may be turned off in the fingerprint detection mode, that is,at least a portion of the light emitting diodes in the non-fingerprintdetection region Rnf are turned off, and only the pixels (or the lightemitting diodes in these pixels) in the fingerprint detection region Rfare turned on. In some other embodiments, when the display device 900 isin fingerprint detection mode, only at least one of the first lightemitting diode, the second light emitting diode and the third lightemitting diode (for example, the first light emitting diode) in thefingerprint detection region Rf may be turned on, and at least one ofthe other light emitting diodes (such as the second light emitting diodeand the third light emitting diode) in the fingerprint detection regionRf is turned off, or, the light emitting diode which is overlapped withthe optical sensor 406 is turned off, but not limited thereto. Theoptical sensor in the fingerprint detection region Rf may for example beconfigured to receive the light reflected by the finger and generate anelectrical signal. The electrical signal may for example be served as afingerprint authentication signal, but not limited thereto. The opticalsensor in the non-fingerprint detection region Rnf may for example beconfigured to receive the ambient light and generate an electricalsignal, wherein the electrical signal may for example be served as abackground signal, but not limited thereto. It should be noted that whenthe display device 900 is in the fingerprint detection mode, the opticalsensor in the fingerprint detection region Rf may also receive theambient light other than the light reflected by the finger, so theelectrical signal for fingerprint authentication generated by theoptical sensor of the fingerprint detection region Rf may include thenoise caused by the ambient light. In order to decrease the effect ofthe ambient light on the signal of fingerprint authentication, thebackground signal generated by the optical sensor in the non-fingerprintdetection region Rnf may be deducted from the electrical signalgenerated by the optical sensor in the fingerprint detection region Rfto obtain the calibrated fingerprint authentication signal, that is, thecalibrated fingerprint authentication signal may be the same as thefingerprint authentication signal deducts the background signal (ambientlight), but not limited thereto. Therefore, the effect of the ambientlight on the process of fingerprint authentication may be decreased. Inanother aspect, in some embodiments, when performing calibration of thelight emitting diodes on the display device 900, the first lightemitting diode in the display region IR may be turned off, only thesecond light emitting diode is turned on, and the light emittinginformation of the second light emitting diode may be collected byreceiving the light emitted from the second light emitting diode by theoptical sensor to perform optical calibration, but the presentdisclosure is not limited thereto.

As mentioned above, an electronic device is provided by the presentdisclosure. The electronic device includes a substrate, an opticalsensor and a light emitting diode. The optical sensor has a first regionnot overlapped with the light emitting diode and a second regionoverlapped with the light emitting diode. The first region of theoptical sensor may receive the light emitted from the light emittingdiode and reflected by the finger to generate a first electrical signal,and the second region of the optical sensor may receive the lightemitted from the light emitting diode to generate a second electricalsignal. According to the first electrical signal and the secondelectrical signal, the electronic device can have functions of luminancecalibration and fingerprint authentication. In some embodiments, theoptical sensor may receive the ambient light in order to collect theinformation of the ambient light. Besides, because the optical sensor ofthe electronic device of the present disclosure may have multiplefunctions, the size of the electronic device may therefore be decreased.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the disclosure. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. An electronic device comprising: a substrate; alight emitting diode disposed on the substrate and emitting a light; andan optical sensor disposed on the substrate and configured to receivethe light wherein the optical sensor partially overlaps the lightemitting diode in a thickness direction of the substrate, wherein theoptical sensor receives the light to generate a first electrical signalfor fingerprint authentication, and receives the light to generate asecond electrical signal for luminance calibration of the light; andwherein the optical sensor comprises a first region not overlapping thelight emitting diode and a second region overlapping the light emittingdiode, and an area of the first region is greater than an area of thesecond region.
 2. The electronic device of claim 1, wherein the firstregion of the optical sensor receives the light to generate the firstelectrical signal, and the second region of the optical sensor receivesthe light to generate the second electrical signal.